--------------------------------------------------------
|                                                        |
|           NanoSim Version G-2012.06 (RHEL64)           |
| Copyright (c) 2012 Synopsys Inc., All Rights Reserved. |
|                                                        |
 --------------------------------------------------------

Built by nsmgr   on Fri May 18 18:17:12 PDT 2012
Mon Nov 12 21:29:43 EST 2012
Machine Name: linux-test-64bit

Command line options:  -n secureFSM_K0_I50.sp -o secureFSM_K0_I50 -c secureFSM_K0_I50.cfg


The 64-bit version of the simulator is running.


Initializing system messages took 0.010 s

LICENSE Information: 
-- Key: TIMEMILL__NSADDON	            
-- Version: 2012.06

Installing interactive/configuration commands ... 
Installing commands took 0.000 s


Start netlist compilation at Mon Nov 12 21:29:44 2012

Compiling "secureFSM_K0_I50.sp" (SPICE)
Compiling "/home/borowcm/libraries/saed90nm.cdl" (SPICE)
Compiling "/home/borowcm/libraries/SAED90nm.lib" (SPICE)
Compiling "/home/borowcm/libraries/SAED90nm.lib" (SPICE)
Compiling "secureFSM_K0_I50_stim.sp" (SPICE)



Parsing netlist finished in 0 seconds
Default circuit temperature                       :       25.000

Netlist compilation will be case insensitive.
All letters will be converted to lower case.
Building instance tree finished in 0 seconds

Finish netlist compilation at Mon Nov 12 21:29:44 2012

Netlist compilation took 0.090 s
NOTICE:Techfile Voltage (*nanosim tech="voltage") set to  1.2V ... 

This simulation uses HSPICE models

WARNING:NanoSim:0x21104432:MISC MODEL PROBLEM: ** warning** associated with encrypted blocks were suppressed

 
Building node/element arrays took 4.430 s

Reading configuration files ...
Reading configuration files took 0.000000 s

WARNING:NanoSim:0x21108427:Output current waveform sampling resolution (= 1e-15 A) is smaller than the simulation current resolution (= 1e-12 A). 

# of CMOS elements                                        :          398
# of resistors                                            :            1
# of dc voltage sources                                   :            2
# of independent sources                                  :            3
# of current controlled current sources                   :            1
# of elements                                             :          405
# of used elements                                        :          404
# of nodes                                                :          197
# of subckt                                               :          342
# of top-level instances                                  :           55
# of capacitors from netlist                              :            1
     # of Ground CAPS from netlist                        :            1
     # of Coupling CAPS from netlist                      :            0


Circuit partitioning ...

Among 1 stages, there are: 
           0 pwl stages 
           0 grouped pwl stages
           1 analog stages 
           0 NR stages 
           0 grouped analog stages
           0 rc stages 
           0 ud stages 
           0 ADFMI functional model stages
         191 nodes in the largest pwl stage
           0 nodes in the largest digital stage

           1 stages (1 PWL stages) with 150-199 nodes


Among 197 nodes, there are: 
           6 pwl nodes
         191 analog (accurate) nodes
           0 rc nodes
           0 ud nodes

           0 cut nodes 
           0 mem_cut nodes 
         197 no_clamp nodes 
         191 nodes in stages
           6 voltage source nodes
           3 constant nodes
           0 NR nodes

Among 405 elements, there are: 
         401 elements in stages
           3 pwl elements 
          20 pwl+ elements 
           0 synchronous elements 
           0 SMS elements 
         378 analog (accurate) elements
           0 rc elements 
           0 ud elements 
           0 ADFMI functional model elements 
           0 VERILOGA model elements 
           0 behavioral model elements 

         401 mna elements
           0 NR elements
           0 mos transistors identified as keepers
         398 mos transistors need Subthreshold current
           0 keepers removed
           0 keepers reduced


Circuit partitioning took 0.000 s
Constructing matrix ...
Matrix ordering and construction took 0.000 s


After reading configuration file(s), 1 signals are identified to be printed:
           1 element branch current signals, including:
                 1 element branch inst. current signals

Statistics of memory used for signal printing:
      427288 bytes allocated in total, including:
            160000 bytes allocated additionally for node current signals
            267288 bytes allocated additionally for element branch current signals

Levelizing stages ...
Levelizing stages took 0.000 s
DC initialization ...
WARNING:NanoSim:0x2110e526:Element xnextstate_reg[2].mmp7 outside tech_file range (vg=1.26728, vd=-0.269577, vs=1.2)... at 0ns 
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110e526:Element xnextstate_reg[3].mmp7 outside tech_file range (vg=1.28954, vd=-0.269271, vs=1.2)... at 0ns 
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110e526:Element xu65.mmp4 outside tech_file range (vg=0, vd=0.0613047, vs=1.6)... at 0ns 
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110e526:Element xu43.mmn1 outside tech_file range (vg=0, vd=1.50434, vs=0)... at 0ns 
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110e526:Element xu70.mmp2 outside tech_file range (vg=-0.43751, vd=1.2, vs=1.6)... at 0ns 
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110e526:Element xu70.mmp1 outside tech_file range (vg=-0.436522, vd=1.2, vs=1.6)... at 0ns 
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110e526:Element xu63.mmn5 outside tech_file range (vg=0.24277, vd=1.6, vs=0)... at 0ns 
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110e526:Element xu62.mmp1 outside tech_file range (vg=-0.436522, vd=1.2, vs=1.6)... at 0ns 
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110e526:Element xu38.mmp1 outside tech_file range (vg=-0.199939, vd=1.2, vs=1.6)... at 0ns 
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110e526:Element xu38.mmp2 outside tech_file range (vg=-0.43751, vd=1.2, vs=1.6)... at 0ns 
WARNING:NanoSim:0x20102001:Previous message has been printed 10 times, It will not be printed again! To change the limit for every message type, use:
	"set_mesg_opt limit_per_mesg=<limit>"
WARNING:NanoSim:0x2110e5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x20102001:Previous message has been printed 10 times, It will not be printed again! To change the limit for every message type, use:
	"set_mesg_opt limit_per_mesg=<limit>"

Finishing initialization (level 0 -- 0)
0 dynamic stages assigned in DC Initialization

Number of residual dc events scheduled          : 0
Number of ic nodes scheduled                    : 0
DC initialization took 0.030 s

Simulation begins in pwl mode ...
WARNING:NanoSim:0x2110f524:Positive bulk-source bias: element xu37.mmn4, vbs=0.400086... at 25.03ns 
WARNING:NanoSim:0x2110f524:Positive bulk-source bias: element xu37.mmn3, vbs=0.400086... at 25.03ns 
WARNING:NanoSim:0x2110f526:Element xnextstate_reg[1].mmp1 outside tech_file range (vg=1.14151, vd=-0.373008, vs=1.19983)... at 25.09ns 
WARNING:NanoSim:0x2110f5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110f526:Element xnextstate_reg[1].mmp3 outside tech_file range (vg=1.12354, vd=-0.373008, vs=1.19512)... at 25.09ns 
WARNING:NanoSim:0x2110f5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110f526:Element xnextstate_reg[1].mmn3 outside tech_file range (vg=-0.0107747, vd=1.19512, vs=-0.373008)... at 25.09ns 
WARNING:NanoSim:0x2110f5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110f526:Element xnextstate_reg[2].mmp1 outside tech_file range (vg=1.14876, vd=-0.407536, vs=1.19981)... at 25.09ns 
WARNING:NanoSim:0x2110f5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110f524:Positive bulk-source bias: element xnextstate_reg[2].mmn1, vbs=0.407536... at 25.09ns 
WARNING:NanoSim:0x2110f526:Element xnextstate_reg[2].mmp3 outside tech_file range (vg=1.12968, vd=-0.407536, vs=1.19556)... at 25.09ns 
WARNING:NanoSim:0x2110f5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110f524:Positive bulk-source bias: element xnextstate_reg[2].mmn3, vbs=0.407536... at 25.09ns 
WARNING:NanoSim:0x2110f526:Element xnextstate_reg[2].mmn3 outside tech_file range (vg=-0.0100889, vd=1.19556, vs=-0.407536)... at 25.09ns 
WARNING:NanoSim:0x2110f5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110f524:Positive bulk-source bias: element xu50.mmn2, vbs=0.418276... at 29.99ns 
WARNING:NanoSim:0x2110f524:Positive bulk-source bias: element xu50.mmn1, vbs=0.418276... at 29.99ns 
WARNING:NanoSim:0x2110f526:Element xu50.mmn1 outside tech_file range (vg=-0.0135611, vd=1.21018, vs=-0.418276)... at 29.99ns 
WARNING:NanoSim:0x2110f5f7:NOTICE: tech_file range is being expanded. 
WARNING:NanoSim:0x2110f524:Positive bulk-source bias: element xu53.mmn2, vbs=0.412504... at 29.99ns 
WARNING:NanoSim:0x2110f524:Positive bulk-source bias: element xu53.mmn1, vbs=0.412504... at 29.99ns 
WARNING:NanoSim:0x2110f526:Element xu53.mmn1 outside tech_file range (vg=-0.0116529, vd=1.21029, vs=-0.412504)... at 29.99ns 
WARNING:NanoSim:0x2110f5f7:NOTICE: tech_file range is being expanded. 
Simulation ends at 540.000 ns

Simulation took 1.070 s

Current information calculated over the intervals:

     0.00000e+00 -  5.40010e+02 ns




Simulation time resolution                      : 1.000e-02 ns
Print time resolution                           : 1.000e-02 ns
Number of PWL matrix solutions                  : 2613
Number of PWL MOS model lookups                 : 1005805
Number of time steps                            : 2529
Number of iterations                            : 0
Number of rejected time steps                   : 173

Global simulation parameters used:

SPD            0.06V     ASPD          0.024V
SIM_DESV       0.06V     SIM_AESV      0.024V
VDS_MIN  9.34266e-11V     AVDS_MIN 9.34266e-11V
SSC (steady state current)       1e-07uA
SUBI (subthreshold current)      1e-06uA
DC CURRENT                       1e-06uA

	       6.0 real	       6.1 user	       0.1 sys

Signal data is saved in secureFSM_K0_I50.out

No errors reported in the .err file (secureFSM_K0_I50.err)